Dr Lakhveer Singh, Assistant Professor, Department of Environmental Science, SRM University-AP, Andhra Pradesh published an article titled “Remediation strategies for mitigation of phthalate pollution: Challenges and future perspectives” in the Journal of Hazardous Materials, with an Impact Factor of 9.03. In recent times, there has been an escalating concern over the risk of phthalate exposure leading to adverse effects on human health and the environment. Dr Lakhveer acknowledged the necessity of understanding the current status of phthalate pollution, their sources, exposure routes, and health impacts, along with understanding the remediation technologies for mitigating such issues.

In this collaborative work between Indian Institute of Technology, Delhi, Jawaharlal Nehru University, and SRM AP, Dr Lakhveer enumerates the major phthalates in use today, shares insights on the ever-increasing data on health burdens posed by phthalates and simultaneously, highlights the recent advancements in research to alleviate phthalate contamination from the environment. Tracing their environmental fate, he addresses the growing health hazard concerns imposed by phthalates, along with focusing on understanding the different physical, chemical, and biological treatment of phthalates that are currently being used.

Dr Lakhveer explains, “Depending on the degree and nature of contamination, PAEs can be eliminated from different environmental matrices via various available processes such as adsorption, coagulation-flocculation, microbial biodegradation, phytoremediation, photocatalysis, and advanced oxidation processes. However, the efficiency of all these processes depends on various factors including inherent Physico-chemical nature of phthalates, environmental factors, and technological sufficiency.” Thus, advancing his research work in the future, Dr Lakhveer will opt for a holistic approach to develop novel processes for the remediation.

Dr Goutam Kumar Dalapati, Associate Professor, Department of Physics, SRM University-AP, Andhra Pradesh, published a research paper “Improvement on Photoresponse Properties of Self-Powered ITO/InP Schottky Junction Photodetector by Interfacial ZnO Passivation” in the reputed Journal of Electronic Materials, Springer. Photodetection has emerged as the key technology in contemporary science because of their wide range of applications in daily life and in industry, including astronomy, surveillance, environmental monitoring, machine vision, and cameras in smart phones. Commercial photodiodes should meet the criteria of high charge carrier mobility, small exciton binding energy, and higher stability. This intrigued Dr Goutam to indulge in the study of photodetector which is essential to improve several electrical parameters such as low power consumption, and higher sensitivity.

In this research, Dr Goutam developed a high-performance photodetector using Indium phosphide/indium tin oxide (InP/ITO) semiconductor metal junction. He explains, “Photodetection in semiconductors follows the principle of generating electron-hole pairs under incident light higher than or equal to its bandgap. In Schottky type photodiode, at thermal equilibrium, the Fermi levels of the metal and the semiconductor are equalized, and a transfer of electronic charge occurs from the semiconductor to the metal. Moreover, these charge transport properties can be simply tailored by compositional engineering, which provides plenty of space to modulate the performance metrics of the photodetectors. During my research, the atomic layer deposition of zinc oxide (ZnO) on the InP surface was found to increase the valence band offset for current conduction in the photodiode. Photoresponse properties were believed to improve through effective hole blocking by the ZnO interface layer which further prevents the surface recombination of photo-induced generated electron-hole pair. Through my research, I deciphered that the ITO/ZnO/InP photodiode exhibited a maximum photoresponsivity of 44.2 mAW−1 under a 520 nm laser irradiation with an illumination power of 1 μW at the zero bias voltage.”

For the successful implementation of the proposed ITO/ZnO/InP photodiode in the manufacturing levels, significant efforts are essential. Dr Goutam acknowledges that device to device variability must be addressed which arise from the deposition condition of the ZnO layer by atomic layer deposition. Surface defects reduction and selection of charge collecting electrodes must be optimized to improve the performance of the photodetector. Thus, Dr Goutam will dedicate his future research work to study patterned 2D graphene-based electrode to improve the performance. Also, n-type 2D MoS2 and hexagonal boron nitride (hBN) passivation will be studied by him on the III-V semiconductor surface for better photoresponsivity.