Assistant Professor

Dr Jatis Kumar Dash 

Department of Physics

Faculty Details

Education

2003

Sonepur College / Sambalpur University
Odisha
B.Sc

2005

Sambalpur University
Odisha
M.Sc

2007

Institute of Physics
Odisha
Diploma (Eq. to M.Phil)

2012

Institute of Physics
Odisha
Ph.D.

Experience

  • August 2012 to August 2015, Postdoc.  Research Associate | Rensselaer Polytechnic Institute (RPI), New York, USA
  • October 2015 to February 2016, Postdoc.  Research Associate | Indian Institute of Technology (IIT), Bhubaneswar, India
  • April 2016 to July 2017, Postdoc.  Research Associate | Nano Convergence Lab, Yonsei Univ., Seoul, South Korea

Skills & Abilities

  • Operating Systems: Linux, Windows, Mac
  • Programming: Python, C, C++, FORTRAN, HTML
  • Scientic Software: Mathematica, Matlab, LabVIEW
  • Growth Techniques: Expertise in MBE, CVD (growing 2D materials), PVD, Magnetron Sputtering
  • Characterization Tools: Scanning probe microscopy (AFM and STM ), XRD, XPS, RHEED, Raman, PL
  • Instrumentation: Experience in designing and installation of custom-made High-Vacuum and UHV growth chamber with insitu electron diffraction facility.

Research Interest

  • Fabrication and characterization of 2D layered transition metal dichalcogenides (TMDs), Oxides (TMOs) and Carbides (Mxenes) leading to device applications i.e. FETs, Solar Cells and Energy storage
  • Epitaxial growth of Metal and Semiconductor hetero-structures and their characterizations.
  • Crystallographic texture analysis by X-ray pole figure and RHEED surface pole figure techniques.
  • Thermoelectric materials and devices

Awards & Fellowships

  • Best poster presentation award by American Vacuum Society (AVS) at Rensselaer Polytechnic Institute, New York, USA in Fall meeting-2014
  • Brain Korea (BK21) Plus research fellowship at Yonsei University, Seoul, South Korea in 2016
  • Korea research fellowship(KRF) from Natiotional Reseach Foundation (NRF), South Korea in 2016

List of Publications

  • Direct Observation of Grain Boundaries in Chemical Vapor Deposited Graphene - J.-Y. Lee, J.-H. Lee, M. J. Kim, J. K. Dash, C. Lee, R. Joshi, A. Soon, G.-H. Lee Carbon 115, 147-153 (2017)
  • Large single crystal SnS2 flakes synthesized from co-evaporation of Sn and S - Yang, J. K. Dash, A. Littlejohn, T.-M. Lu, G.-C. Wang - Crystal growth and Design, 16(2), 961-973 (2016)
  • Tuning the phase and optical property of ultra-thin SnSx films - Yang, J. K. Dash, T.-M. Lu, G.-C. Wang, L. H. Zhang and K. Kisslinger - Journal of Physical Chemistry C, 120 (24), 13199-13214 (2016)
  • A Method Toward Fabricating Semiconducting 3R-NbS2 Ultrathin Films - Dash*, L. Chen, P. Dinolfo, T.-M. Lu, and G.-C. Wang - Journal of Physical Chemistry C, 119 (34), 1976319771 (2015)
  • A simple growth method for Nb2O5 films and their optical properties - Dash*, L. Chen, P. Dinolfo, L. H. Zhang, K. Kisslinger, T.-M. Lu and G.-C. Wang RSC Advances, 5(45), 36129-36139 (2015)
  • Metal enhanced Ge1-xSnx alloy film growth on glass substrates using biaxial CaF2 buffer layer. K. Dash*, L. Chen, T.-M. Lu, G.-C. Wang, L. H. Zhang and K. Kisslinger CrystEngComm, 16(37), 8794-8804 (2014)
  • Universality in shape evolution of Si1-xGex structures on high index Silicon surfaces - Dash, T. Bagarti, A. Rath, R. R. Juluri, P. V. Satyam - Euro Physics Letter (EPL) 99(6)66004 p1-p6 (2012)
  • Shape evolution of MBE grown Si1-xGex structures on high index Silicon surfaces: A temperature dependent study - Dash, A. Rath, R. R. Juluri, P.V. Satyam - Phys. D: Appl. Phys. 45(45) 455303 p1-p6 (2012)
  • DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces K. Dash, A. Rath, R. R. Juluri,P Santhana Raman, K. Muller, A. Rosenauer and P.V. Satyam J. Phys.: Condens. Matter 23(13), 135002 p1-p8 (2011)
  • Morphological variations in AuxSiy nanostructures under variable pressure and annealing conditions
  • Rath, J. K. Dash, R. R. Juluri, and P.V. Satyam - Applied Physics A , 118(3) 1079-1085 (2015)
  • A study of initial stages of growth of Au-assisted epitaxial Ge nano wires on clean Ge (100) Surface - Rath, K. Dash, R. R. Juluri, A. Ghosh, A. Rosenauer and P. V. Satyam CrystEngComm, 16(12), 2486-2490 (2014)
  • Instrument response of reflection high energy electron diffraction pole figure
  • Chen, J. K. Dash, P. Su, C.F. Lin, I. Bhat, T.-M. Lu and G.-C. Wang - Applied Surface Science, 288, 458-465 (2014)
  • Growth of Oriented Au Nanostructures: Role of Oxide at the Interface - Rath, K. Dash, R. R. Juluri, A. Rosenauer, Marcos Schoewalter and P.V. Satyam -Appl. Phys. 111(6), 064322 p1-p3 (2012)
  • Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces - Rath, K. Dash, R. R. Juluri, A. Rosenauer and P. V. Satyam - Appl. Phys. 111(10), 104319 p1-p8 (2012)
  • Epitaxy-like orientation of nanoscale Ag islands grown on air-oxidized Si(110)-(5×1) surfaces - Anupam Roy, J. K. Dash, A. Rath and B. N. Dev - Surface and Interface Analysis, 44(5), 513-518 (2012)
  • Temperature dependent electron microscopy study of Au thin films on Si(100) with and without native oxide layer as barrier at the interface - Rath, K. Dash, R. R. Juluri, A. Rosenauer and P. V. Satyam - Physics D: Applied Physics, 44(11), 115301 p1-p9 (2011)
  • Growth of oriented Ag nanocrystals on air-oxidized Si surfaces: An insitu high energy electron diffraction study - Roy, K. Bhattacharjee, K. Dash and B. N. Dev - Thin Solid Films 520(2), 853-860 (2011)
  • Observation of grain growth in swift heavy ion irradiated NiO thin films
  • Mallick, C. Rath, J. K. Dash, R. Biswal, D. C. Agarwal, D. Behera, D. K. Avasthi, D. Kanjilal, P. V. - Satyam and N.C. Mishra - Indian Journal of Physics 84 (10), 1399-1404 (2010)
  • Formation of aligned nano-silicide structures in MBE grown Au/Si(110) system: A real time temperature dependent TEM study - M. Bhatta, J. K. Dash, A. Roy, A. Rath and P. V. Satyam - Phys.: Condens. Matter 21(20), 205403 p1-p7 (2009)
  • Oxide mediated liquid-solid growth of high aspect ratio-aligned gold silicide microrods on Si (110) substrates - M. Bhatta, A. Rath, J. K. Dash, J. Ghatak, L. Yi-Feng, C.-P. Liu, P. V. Satyam Nanotechnology 20(46), 465601 p1-p7 (2009)
  • Structural phase transitions in Au thin films on Si (110): An in-situ temperature dependent transmission electron microscopy study - Umananda M. Bhatta, J. K. Dash, A. Rath, P. V. Satyam - Applied Surface Science, 256(2), 567-571 (2009)
  • Growth of oriented crystalline Ag nanoislands on air-exposed Si(001) surfaces A Roy, K. Bhattacharjee, J. K. Dash and B. N. Dev - Applied Surface Science, 256(2), 361-364 (2009)
  • Shape transformation of Si1-xGex structures on ultra clean Si (5 5 7) and Si (5 5 12) surfaces K. Dash, A. Rath, R. R. Juluri, K. Mueller, A. Rosenauer, P.V. Satyam Journal of Physics: Conf. Series 326, 012021 (2011)

Presentations

  • Poster Presentation at 4th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2016), held at Jeju, South Korea - Title: Hetero-epitaxial growth of two dimensional molybdenum oxide layers
  • Poster Presentation at American Vacuum Society (AVS) Fall meeting-2014, held at Rensselaer Polytechnic Institute (RPI), New York, USA. (Awarded with Best Poster Presentation) - Title: Metal enhanced Ge1-xSnx alloy film growth on glass substrates using biaxial CaF2 buffer Layer
  • Poster presentation at Workshop on Electron Microscopy (WEM-2011), held at Institute of Physics, Bhubaneswar, India. - Title: Aligned Si-Ge nanostructures on high index Si surfaces
  • Presented a poster in International conference on Ion beam induced nano-patterning of materials (IINM-2011), held at Institute of Physics, Bhubaneswar, India. - Title: Self-organization of aligned Ge structures on high index Si(5 5 7) and Si(5 5 12) surfaces
  • Oral presentation at Seminar on Physics and Technology of Novel Materials (PTNM-2010) at Sambalpur University, India. - Title: Aligned Quantum Structures on High Index Silicon Surfaces
  • Poster presentation at International Conference on Physics at Surfaces and Interfaces, PSI-2009, Toshali Sands, Puri, India. - Title: Structural phase transitions in Au thin films on Si (110): An in-situ temperature dependent transmission electron microscopy study

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