A paper titled “Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications” has been published by Dr Pranab Mandal, Assistant Professor of Physics and his PhD student, Ms K N Malleswari in the journal ‘Current Applied Physics’ having an Impact Factor of 2.480.
Resistive random-access memory (ReRAM) devices are based on the resistance switching (RS) effect. Such RS devices have recently attracted significant attention due to their potential application in realizing the next-generation non-volatile memory (NVM) devices. The present work reports on resistive switching (RS) characteristics of Neodymium (Nd)-doped bismuth ferrite (BFO) layers. The Nd (2–10 at%) doped BFO thin film layers were deposited using a spray pyrolysis method. The structural analysis reveals that a higher Nd doping concentration in BFO leads to significant distortion of the prepared Nd: BFO thin films from rhombohedral to tetragonal characteristics. The morphological analysis shows that all the deposited Nd: BFO thin films have regularly arranged grains. The X-ray photoelectron spectroscopy (XPS) analysis reveals that the prepared Nd: BFO thin films have a higher Fe3+/Fe2+ ratio and fewer oxygen vacancy (VO) defects which enrich the ferroelectric characteristics in Nd: BFO layers. The polarization-electric field (P-E) and RS characteristics of the fabricated Nd: BFO-based RS device were examined. It was observed that the Nd (7 at%) doped BFO RS device shows large remnant polarization (P r) of 0.21 μC/cm2 and stable RS characteristics.
Research in brief
Non-volatile resistive random access memory (RRAM) are future generation random access memory device with potential benefits such as high operational speed (nanoseconds read and write time), non-volatility, high endurance scalability and low power consumption [Namnoscale Research Lett., 15, 90, 2020]. Here in this work, we presented the resistive switching characteristics of a multiferroic material namely Nd-doped BiFeO3 material. The device shows stable resistive switching characteristics.
Practical implementation/social implications
Researchers in this field are focusing to overcome challenges of high operation current, lower resistance ratios, and reliability issues [Namnoscale Research Lett., 15, 90, 2020]. While several prototype RRAMs have been developed by other groups, future memory applications would require overcoming the challenges mentioned above.
The work has been conceptualized by Dr Amiruddin at Crescent Institute of Science and Technology, Chennai; and Dr Pranab Mandal and Ms Malleswari provided inputs on ferroelectric polarization – electric field (P – E) measurement and drafting.