Tunnel Field Effect Transistor Design and Analysis for Biosensing Applications

tunnel field effect transistor

The Department of Electronics and Communication Engineering is glad to announce that Mr Garikapati Anith Chowdary, a BTech passed-out student has published a paper in collaboration with Assistant Professor Dr M Durga Prakash. The paper titled Tunnel Field Effect Transistor Design and Analysis for Biosensing Applications was published in the Q2 journal Silicon having an Impact Factor 2.941.

The physical modelling of the tunnel field effect transistor (TFET) is done in this study. The Silvaco TCAD tool is used to design and simulate the TFET structure. The FET device has attracted a lot of attention as the ideal tool for creating biosensors because of its appealing properties such as ultra-sensitivity, selectivity, low cost, and real-time detection capabilities in a sensing point of view.

These devices have a lot of potential as a platform for detecting biomolecules. Short channel effects, specificity, and nano-cavity filling have all been improved in FET-based biosensors. FET-based biosensors are appropriate for label-free applications. Random dopant variations and a thermal budget are seen during the construction of a JLFET. To overcome this problem, the charge-plasma-based concept was established in FETs in this study.

Different metallurgical functions for electrodes were employed in this biosensor to behave as a p-type source and n-type drain. To alleviate the short channel effects, a dual material gate work function for the gate electrode was devised, as well as a double gate architecture. Biomolecules can be neutral or charge-based, and both types of biomolecules can be identified using a proof-of-concept FET-based biosensor. Changes in the drain current (Id) of the device were achieved by varying dielectric values and charges in the cavity region with variable cavity lengths.

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