Researchers at the Department of Physics have successfully developed large-area ultra-thin 2D transition metal oxide (TMO) layers using a cost-effective and straightforward method through proximity evaporation under ambient conditions. Associate Professor Dr Jatis Kumar Dash and his students Shaik Md. Abzal, Kurapati Kalyan, and Sai Lakshmi Janga have secured a patent for their research in Two-Dimensional Transition Metal Oxide Layers and A method for their Synthesis (application no: 202241005220). They have integrated the 2D TMO layers with various other 2D materials to create nano-electronic devices. Their work demonstrates the immense potential of ultra-thin TMOs in 2D-material-based flexible electronics.
Patent Background
The two-dimensional (2D) ultrathin hetero-stacked layers show unusual physiochemical properties when reduced to a few atoms in thickness. These 2D heterostructures offer significant benefits for next-generation devices. Firstly, their atomically thin 2D nanosheets provide a larger surface area due to the complete exposure of surface atoms. Secondly, edge sites in 2D nanosheets are chemically more reactive than their basal planes, and open gaps allow for the intercalation of electrolyte ions. In addition, the high mechanical strength and flexibility at atomic dimensions make them suitable for use in next-generation wearable electronics. However, growing and stacking 2D materials is challenging, and existing growth tools are complex and costly.
Future Prospects
2D materials are critical for making flexible, wearable, foldable and transparent self-powered smart electronic devices. The next generation smart electronic devices will be
made of 2D materials heterostructures which will need less operating power, fewer materials consumption and will have ultimate scalability.