Associate Professor

Dr. Goutam Kumar Dalapati

Department of Physics

Interests

  1. Renewable energy and smart coating
  2. Nanotechnology
  3. Materials integration and devices.

Education

1998

University of Calcutta
India
Bachelors

2000

University of Calcutta
India
Masters

2005

Jadavpur University
India
Ph.D.

Experience

  • Jan. 2007-Dec. 2018, Scientist | Institute of Materials Research & Engineering (A*STAR), Singapore
  • Nov. 2005-Dec. 2006, Post-doctoral fellow | Dept. of ECE, National University of Singapore (NUS), Singapore
  • Jan. 2004-Jun. 2005, Research Associate | Dept. of E and ECE,  Newcastle University, Newcastle upon Tyne, UK and  Atmel Company (UK)

Research Interest

Smart coating: Energy saving, heat sink, self-cleaning, Anti-reflection, Anti-scratch
  • Passive and active coating for indoor comfort (cooling and heating)
  • Multilayer coatings for low-emissive coating and seld cleaning
  • Oxide and sulfide based materials for transparent, anti-scrach, and self cleaning
  • Heat sink for optical and electronics devices
Thin film process and technology: Optical and Electronic devices
  • Thin film metal and dielectrics for optical and electronic applications
  • ALD Sputter, E-beam, and Interface engineering
  • Transparent conducting film (ITO, FTO, AZO, multilayer, metal nanowire, and composite)
Renewable energy: Photovoltaic and solar hydrogen
  • Advanced inorganic materials and Nanotechnology for renewable energy generation
  • Thin film solar cells and solar hydrogen production
  • Hetero-junction solar cells (Oxides/silicon, Oxide/oxide, III-V/Ge, Silicide/silicon, CZTS/CdS)
  • Earth abundant materials (Oxide, silicide, sulfide) for low cost solar cells and electronic devices
Heterogeneous materials integration: High performance devices on silicon platform
  • High mobility channel materials (Strained-Si, SiGe, III-V)
  • III-V and III-N for optical and electronic application (Logic and memory, photodetector)
  • Integration of III-V/Si, Strained-Si, GaN on Si,
  • Surface passivation and contact technology for high mobility channel materials

Awards & Fellowships

  • Nov-Dec 2016,  Visiting scientist under Global Initiative of Academic Networks (GIAN) program, National Institute of Technology Durgapore, India
  • SSEF-2016, S. P. Chu and G. K. Dalapati, CuO and graphene composite for solar driven hydrogen production, Bronze award, Singapore Science and Engineering Fair (SSEF), Singapore
  • SSEF-2016, S. Kapoor, K. Panicker and G. K. Dalapati, CZTS based earth abundant materials for solar energy harvesting, Merit and special award, Singapore Science and Engineering Fair, Singapore
  • SSEF-2015, Lim Wei Jie, Wong Yuet Xin, and G. K. Dalapati “Development of Copper Oxide Graphene Composite and Low Cost Transparent Electrode for Solar Energy Harvesting” Merit Award, Singapore Science and Engineering Fair
  • M3/2014, S. T. Chua, S. Masudy-Panah, Y. Jiaqi, and G. K. Dalapati, “Design of low emission glass using copper and metal oxides,” 4th Molecular Materials Meeting (M3), best poster award, Singapore
  • M3/2014, A. Kumar and G. K. Dalapati, “Large grained polycrystalline silicon thin films with high hall mobility for solar cell and transparent electronic applications,” 4th Molecular Materials Meeting, best poster award, Singapore.
  • SSEF-2012, Kelvin, Do Thu Hien, G. K. Dalapati, "Atomic Layer Deposition (ALD) and Comparative                                 Assessments of its Metal Oxides for Transistor Applications,", Bronze Award
  • MRS-S-2010, G. K. Dalapati, C. K. Chia, A. S. W. Wong, and D. Z. Chi, “Future Oxides and Channel Materials for Ultimate Scaling,”4th MRS-S Conference on Advanced Materials, Singapore, best poster award

Memberships

  • 2015-2019, Materials Research Society-Singapore
  • 2018-2019, Editorial board member for special issue of symposium P “Advanced Inorganic Materials and Thin Film Technology for Solar Energy Harvesting and Electronic Application” in ICMAT 2019 in Journal of Materials Chemistry A (JMCA RSC)
  • 2016-2018, Editorial Board Member of Scientific Reports since 2016 (Nature publishing group)
  • 2017-2018, Editorial board member for special issue of symposium F in ICMAT 2017 in solar energy materials and solar cells (SOLMAT)
  • 2015-17-19, Symposium chair (ICMAT)     Materials for Advanced Technologies, Topic: “Inorganic materials and thin film technology for renewable energy application” Singapore
  • 2016, Symposium Chair (ICYRAM) IUMRS-International Conference of Young Researchers, Topic “Photovoltaics” India
  • 2016, Symposium Chair (IUMRS-ICEM), Topic “Earth abundant materials for solar energy harvesting” Singapore
  • 2013, Symposium Chair in 15th Asian chemical congress, Singapore
  • 2013, Organizing committee member of (IEEE INEC), M3-Singapore, 4th MRS-S

Publications

  • Zhuk, T. K. S. Wong, E. Tyukalova, A. Guchhait, D. H. L. Seng, S. Tripathy, T. I. Wong, M. Sharma, H. Medina, M. Duchamp, L. H. Wong, G. K. Dalapati*, “Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu2ZnSnS4 and Mo,” Appl. Surf. Sci., (Impact factor:4.4) 471, 277-28, 2019
  • Sultana, S. Paul, A. Karmakar, G. K. Dalapati, S Chattopadhyay, “Optimizing the thermal annealing temperature: technological route for tuning the photo-detecting property of p-CuO thin films grown by chemical bath deposition method,” J. Mater. Sci. Mater. Electron., (Impact factor:2.3), 29, 12878-12887, 2018.
  • *G. K. Dalapati, K. Kushwaha, M. Sharma, V. Suresh, S. Shannigrahi, S. Zhuk, and S. Masudy-Panah, “Transparent Heat Regulating (THR) Materials and Coatings for Energy Saving Window Applications: Impact of Materials Design, Micro-Structural, and Interface Quality on the THR Performance,” Progress in Materials Science, (Impact factor: 31.1), 95, pp. 42-131, 2018.
  • Masudy-Panah, S. Zhuk, H. R. Tan, X. Gong, *G. K. Dalapati, “Palladium nanostructure incorporated cupric oxide thin film with strong optical absorption, compatible charge collection and low recombination loss for low cost solar cell applications,” Nano Energy, (Impact factor: 12.3), 46, pp. 158–167, 2018
  • *G. K. Dalapati, S Guhathakurata, A Das, C Mahata, S Chakraborty, S Bhunia, HL Seng, S Chattopadhyay, LK Bera, S Tripathy, “Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al0.3Ga0.7As bi-layer buffer,” Alloy. Comp. (Impact factor: 3.77), 765, pp. 994-1002, 2018
  • * K. Dalapati, S. Zhuk, S. Masudy-Panah, A. Kushwaha, H. L. Seng, V. Chellappan, V. Suresh, Z. Su, S. K. Batabyal, C. C. Tan, A. Guchhait, L. H. Wong, T. K. S. Wong, and S. Tripathy “Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells,” Sci. Rep., (Impact factor: 4.3), 7, p. 1350, 2017.
  • Masudy-Panah, R. S. Moakhar, C. S. Chua, A. Kushwaha, and *G. K. Dalapati, “Stable and Efficient CuO Based Photocathode through Oxygen-Rich Composition and Au-Pd Nanostructure Incorporation for Solar-Hydrogen Production,” ACS Appl. Mater. Interfaces, (Impact factor: 7.5), 9, 27596–27606, 2017.
  • Zhuk, A. Kushwaha, T. K. S. Wong, S. Masudy-Panah, A. Smirnov, and *G. K. Dalapati, “Critical review on sputter-deposited Cu2ZnSnS4 (CZTS) based thin film photovoltaic technology focusing on device architecture and absorber quality on the solar cells performance,” Sol. Energy Mater. Sol. Cells, (Impact factor: 4.7), 171, 239-252, 2017.
  • Sultana, S. Paul, A. Karmakar, R. Yi, G. K. Dalapati, S. Chattopadhyay, “Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time,” Appl. Surf. Sci., (Impact factor: 3.3), 418, pp. 380-387, 2017.
  • Kushwaha, R. S. Moakhar, G. K. L. Goh, *G. K. Dalapati, “Morphologically tailored CuO photocathode using aqueous solution technique for enhanced visible light driven water splitting,” J. Photochem. Photobiol A, (Impact factor: 2.6), 337, pp. 54-61, 2017.
  • * K. Dalapati, S. Masudy-Panah, S. T. Chua, M. Sharma, T. I. Wong, H. R. Tan, D. Z. Chi “Color tunable low cost transparent heat reflector using copper and titanium oxide for energy saving application,” Sci. Rep., (Impact factor: 4.3), 6, p. 20182, 2016.
  • Masudy-Panah, R. S. Moakhar, C. S. Chua, A. Kushwaha, T. I. Wong, and *G. K. Dalapati, “Rapid thermal annealing assisted stability and efficiency enhancement in a sputter deposited CuO photocathode,” RSC Adv., (Impact factor: 3.1), 6, 29383, 2016.
  • Masudy-Panah, R. S. Moakhar, C. H. R. Tan, T. I. Wong, D. Z. Chi, and *G. K. Dalapati, “Nanocrystal engineering of sputter-grown CuO photocathode for visible-light-driven electrochemical water splitting,” ACS Appl. Mater. Interfaces, (Impact factor: 7.5), 8, 1206, 2016.
  • Masudy-Panah, K Radhakrishnan, H. R. Tan, R. Yi, T. I. Wong, and *G. K. Dalapati, “In situ codoping of a CuO absorber layer with aluminum and titanium: the impact of codoping and interface engineering on the performance of a CuO-based heterojunction solar cell,” J. Phys. D: Appl. Phys., (Impact factor: 2.5), 49, 375601, 2016.
  • Masudy-Panah, M. Kakran, Y-F Lim, C. S. Chua, H. R. Tan, and *G. K. Dalapati, “Graphene nanoparticle incorporated CuO thin film for solar cell application,” J. Renewable Sustainable Energy, (Impact factor: 1.1), 8, 043507, 2016.
  • Das, A. Kushwaha, R. K. Sivasayan, S. Chakraborty, H. S. Dutta, A. Karmakar, S. Chattopadhyay, D. Z. Chi, and *G. K. Dalapati, “Temperature-dependent electrical characteristics of CBD/CBD grown n-ZnO nanowire/p-Si heterojunction diodes,” J. Phys. D: Appl. Phys., (Impact factor: 2.5), 49, 145105, 2016.
  • K. S. Wong, S. Zhuk, S. Masudy-Panah, and G. K. Dalapati. “Current status and future prospects of copper oxide heterojunction solar cells,” Materials, (Impact factor: 2.6), 9, 271, 2016.
  • M Petrović, V. Chellappan, G. K. Dalapati, S. Ramakrishna, “Photocharge generation and transport studies on BFO/poly (3-hexylthiophene) heterojunction,” Lett., (Impact factor: 2.5), 163, 118, 2016.
  • W-Y Wu, S. Chakrabortty, A. Guchhait, G. Y. Z. Wong, G. K. Dalapati, M. Lin, Y. Chan, “Solution-Processed 2D PbS Nanoplates with Residual Cu2S Exhibiting Low Resistivity and High Infrared Responsivity,” Mater., (Impact factor: 9.4), 28, pp. 9132-9138, 2016.
  • * K. Dalapati, C. S. Chua, A. Kushwaha, S. L. Liew, V. Suresh, D. Z. Chi, “All earth abundant materials for low cost solar-driven hydrogen production,” Mater. Lett., (Impact factor: 2.5), 183, pp. 183-186, 2016.
  • * K. Dalapati, S. Masudy-Panah, A. Kumar, C. C. Tan, H. R. Tan, D. Z. Chi, “Aluminium alloyed iron-slicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology,” Sci Rep., (Impact factor: 4.3), 5, 17810, 2015.
  • Masudy-Panah, *G. K. Dalapati, K. Radhakrishnan, A. Kumar, H. R. Tan, E. Naveen Kumar, C. Vijila, C. C. Tan, and D. Z. Chi, “p-CuO/n-Si heterojunction solar cells with high open circuit voltage and photocurrent through interfacial engineering,” Prog. Photovolt: Res. Appl., (Impact factor: 6.7), 23, 637, 2015.
  • Masudy-Panah, K Radhakrishnan, A. Kumar, T. I. Wong, R. Yi, and *G. K. Dalapati, “Optical bandgap widening and phase transformation of nitrogen doped cupric oxide,” J. Appl. Phys., (Impact factor: 2.0), 118, 225301, 2015.
  • * K. Dalapati, S. K Batabyal, S. Masudy-Panah, Z. Su, A. Kushwaha, T. I. Wong, H. F. Liu, T. Bhat, A. Iskander, Y-F Lim, L. H. Wong, S. Tripathy, D. Z. Chi “Sputter grown sub-micrometer thick Cu2ZnSnS4 thin film for photovoltaic device application,” Mater. Lett., (Impact factor: 2.5), 160, 45, 2015.
  • * K. Dalapati, R. S. Kajen, S. Masudy-Panah, P. Sonar “Defect analysis of sputter grown cupric oxide for optical and electronics application,” J. Phys. D: Appl. Phys., (Impact factor: 2.5), 48, 495104, 2015.
  • * K. Dalapati, C. C. Tan, S. Masudy-Panah, H. R. Tan, D. Z. Chi, “Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications,” Mater. Lett., (Impact factor: 2.5), 159, pp. 455-458, 2015.
  • * K. Dalapati, S. Chakraborty, C. Mahata, M. A. Bhuiyan, J. Dong, A. Iskander, S. Masudy-Panah, S. Dinda, R. B. Yang, T. Lee, D. Z. Chi, C. K. Chia “Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III–V/Ge based device application,” Mater. Lett., (Impact factor: 2.5), 156, pp. 105-108, 2015.
  • Masudy-Panah, K Radhakrishnan, H. R. Tan, R. Yi, T. I. Wong, and *G. K. Dalapati, “Titanium doped cupric oxide for photovoltaic application,” Sol. Energy Mater. Sol. Cells, (Impact factor: 4.7), 140, 266, 2015.
  • C. Tan, *G. K. Dalapati, H. R. Tan, M. Bosman, H. K. Hui, S. Tripathy, D. Z. Chi, “Crystallization of Sputter-Deposited Amorphous (FeSi2)1–xAlx Thin Films,” Cryst. Growth Des., (Impact factor: 4.0), 15, 1692, 2015.
  • Kumar, P. I Widenborg, *G. K. Dalapati, C. Ke, G. S. Subramanian, A. Aberle, “Controlling stress in large-grained solid phase crystallized n-type poly-Si thin films to improve crystal quality,” Cryst. Growth Des., (Impact factor: 4.0), 15, pp 1067–1072, 2015.
  • Kumar, P. I. Widenborg, G. K. Dalapati, G. S. Subramanian, A. G. Aberle, “Impact of deposition parameters on the material quality of SPC poly-Si thin films using high-rate PECVD of a-Si: H,” EPJ Photovoltaics, 6, p. 65303, 2015.
  • Mukherjee, T. Das, C. Mahata, C. K. Maiti, C. K. Chia, S. Y. Chiam, D. Z. Chi, and *G. K. Dalapati, “Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates,” ACS Appl. Mater. Interfaces, (Impact factor: 7.5), 6, pp. 3263-3274, 2014.
  • Masudy-Panah, *G. K. Dalapati, K Radhakrishnan, A. Kumar, H. R. Tan, “Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell,” J. Appl. Phys., (Impact factor: 2.0), 116, 074501, 2014.
  • Huang, N. Sahraei, P. I. Widenborg, I. M. Peters, G. K. Dalapati, A. Iskander, and A. G. Aberle, “Enhanced light trapping in polycrystalline silicon thin-film solar cells using plasma-etched submicron textures,” Sol. Energy Mater. Sol. Cells, (Impact factor: 4.7), 122, 146, 2014.
  • * K. Dalapati, A. Kumar, C. C. Tan, S. L. Liew, P. Sonar, H. L. Seng, H. K. Hui, S. Tripathy, D. Z. Chi, “Impact of Al Passivation and Co-sputter on the Structural Property of β-FeSi2 for Al-Doped β-FeSi2/n-Si(100) Based Solar Cells Application,” ACS Appl. Mater. Interfaces, (Impact factor: 7.5), 5, 5455, 2013.
  • * K. Dalapati, C. K. Chia, C. Mahata, S. Krishnamoorthy, C. C. Tan, H. R. Tan, C. K. Maiti, D. Z. Chi, “Impact of buffer layer on atomic layer deposited TiAlO alloy dielectric quality for epitaxial-GaAs/Ge device application,” IEEE Trans. Electron Devices, (Impact factor: 2.6), 60, pp. 192-199, 2013.
  • Kumar, *G. K. Dalapati, H. Hidayat, F. Law, H. R. Tan, P. I. Widenborg, B. Hoex, C. C. Tan, D. Z. Chi, A. G.  Aberle, “Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications.” RSC Adv., (Impact factor: 3.1), 3, 7733-7738, 2013.
  • *G. K. Dalapati, C. K. Chia, C. C. Tan, H. R. Tan, S. Y. Chiam, J. R. Dong, A. Das, S. Chattopadhyay, C. Mahata, C. K. Maiti, D. Z. Chi, “Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric, ACS Appl. Mater. Interfaces, (Impact factor: 7.5), 5, pp. 949-957, 2013.
  • A Kumar, H Hidayat, C Ke, S Chakraborty, GK Dalapati, PI Widenborg, CC Tan, S Dolmanan, AG Aberle, “Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells,” Appl. Phys., (Impact factor: 2.0), 114, p. 134505, 2013.
  • Virasawmy, N. Palina, P. I. Widenborg, A. Kumar, G. K. Dalapati, H. R. Tan, A. A. O. Tay, B. Hoex, “Direct laser doping of poly-silicon thin films via laser chemical processing,” IEEE J. Photovolt., (Impact factor: 3.7), 3, pp. 1259-1264, 2013.
  • K. Chia and G. K. Dalapati, “Monte Carlo simulation of hot carrier transport in heterogeneous Ge/AlxGa1−xAs (0≤x≤0.8) multilayer avalanche photodiodes,” IEEE Trans. Electron Devices, (Impact factor: 2.6), 60, pp. 3435-3441, 2013.
  • Xu, X. Tong, S. F. Yoon, Y. C. Yeo, C. K. Chia, G. K. Dalapati, D. Z. Chi, “Integration of TaOx-based resistive-switching element and GaAs diode.” APL Mater., (Impact factor: 4.3), 1, p. 032121, 2013.
  • F. Liu, S. B. Dolmanan, S. Tripathy, G. K. Dalapati, C. C. Tan, D. Z. Chi, “Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si (0 0 1) heterojunctions grown by magnetron sputtering,” J. Phys. D: Appl. Phys., (Impact factor: 2.5), 46, p. 095106, 2013.
  • * K. Dalapati, T. K. S. Wong, Y. Li, C. K. Chia, A. Das, C. Mahata, H. Gao, S. Chattopadhyay, M. K. Kumar, H. L. Seng, C. K. Maiti, D. Z Chi “Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping,” Nanoscale Research Letters, (Impact factor: 2.7), 7:99, 2012.
  • Mahata, S. Mallik, T. Das, C. K. Maiti, *G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, E. Miranda, “Atomic layer deposited (TiO2)x(Al2O3)1-x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications,” Appl. Phys. Lett., (Impact factor: 3.4), 100, pp. 062905-1-062905-4, 2012.
  • Mallik, C. Mukherjee, C. Mahata, M. K. Hota, T. Das, G. K. Dalapati, H. GaO, M. K. Kumar, D. Z. Chi, C. K. Sarkar, C. K. Maiti, “Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers,” Thin Solid Films, (Impact factor: 1.8), 522, pp. 267-273, 2012.
  • Xu, S. F. Yoon, Y. C. Yeo, C. K. Chia, Y. B. Cheng, G. K. Dalapati, ‘Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate,” J. Appl. Phys., (Impact factor: 2.0), 111, p. 044504, 2012.
  • Tan, C. T. Chua, G. K. Dalapati, D. Z. Chi, “Effect of Al incorporation on the crystallization kinetics of amorphous FeSi2 into poly β-FeSi2 film on SiO2/Si (100) substrate,” Thin Solid Films, (Impact factor: 1.8), 520, pp. 2336-2338, 2012.
  • Das, C. Mahata, C. K. Maiti, *G. K. Dalapati, C. K, Chia, D. Z. Chi, S. Y. Chiam, H. L. Seng, C. C. Tan, H. K. Hui, G. Sutradhar, P. K. Bose, “Sputter-Deposited La2O3 on p-GaAs for Gate Dielectric Applications,” J. Electrochem. Soc., (Impact factor: 3.2), 159 (2), pp. G15-G22, 2011.
  • L. Liew, Y. Chai, H. R. Tan, H. K. Hui, A. S. W. Wong, G. K. Dalapati, D. Z. Chi, “Improvement in Photovoltaic Performance of Thin Film β-FeSi2/Si Heterojunction Solar Cells with Al Interlayer,” J. Electrochem. Soc., (Impact factor: 3.2), 159 (1), pp. H52-H56, 2011.
  • * K. Dalapati, C. K. Chia, C. Mahata, T. Das, C. K. Maiti, M. K. Kumar, H. Gao, S. Y. Chiam, C. C. Tan, C. T. Chua, Y. B. Cheng, D. Z. Chi “Surface Passivation of GaAs Substrates with SiO2 Deposited Using ALD,” Electrochem. Solid-State Lett., (Impact factor: 2.3), 14, pp. G52-G55, 2011.
  • K. Chia, G. K. Dalapati, Y. Chai, S. L. Lu, W. He, J. R. Dong, D. H. L. Seng, H. K. Hui, A. S.W. Wong, A. J. Y. Lau, Y. B. Cheng, D. Z. Chi, Z. Zhu, Y. C. Yeo, Z. Xu, S. F. Yoon, “Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge,” J. Appl. Phys., (Impact factor: 2.0), 109, p. 066106, 2011.
  • K. Dalapati, S. L. Liew, A. S. W. Wong, Y. Chai, S. Y. Chiam, D. Z. Chi, “Photovoltaic characteristics of p-β-FeSi2(Al)/n-Si heterojunction solar cells and the effects of interfacial engineering,” Appl. Phys. Lett., (Impact factor: 3.4), 98, p. 013507, 2011.
  • K. Dalapati, M. K. Kumar, C. K. Chia, H. Gao, B. Z. Wang, A. S. W. Wong, A. Kumar, S. Y. Chiam, J. S. Pan, D. Z. Chi, Interfacial and electrical characterization of atomic-layer-deposited HfO2 gate dielectric on high mobility epitaxial GaAs/Ge channel substrates,” J. Electrochem. Soc., (Impact factor: 3.2), 157, pp. H825-H831, 2010.
  • Das, C. Mahata, G. K. Dalapati, D. Z. Chi, G. Sutradhar, P. K. Bose, C. K. Chia, S. Y. Chiam, J. S. Pan, Z. Zhang, C. K. Maiti, “Thermal stability of HfOxNy gate dielectrics on p-GaAs substrates” Semicon. Sci. Technol., (Impact factor: 2.3), 25, pp. 125009-125016, 2010.
  • S. Das, G. K. Dalapati, D. Z. Chi, A. Biswas, C. K. Maiti, “Characterization of Y2O3 gate dielectric on n-GaAs substrates,” Appl. Surf. Sci., (Impact factor: 3.3), 256, pp. 2245-2251, 2010.
  • Mallik, C. Mahata, M. K. Hota, G. K. Dalapati, D. Z. Chi, C. K. Sarkar, C. K. Maiti, “HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties,” Microelectron. Engineering, (Impact factor: 1.8), 87, pp. 2234-2240, 2010.
  • K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, D. Z. Chi, “HfOxNy gate dielectric on p-GaAs,” Appl. Phys. Lett., (Impact factor: 3.4), 94, p. 073502, 2009.
  • K. Dalapati, H-J Oh, S. J. Lee, A. Sridhara, A. S. W. Wong, D. Z. Chi “Energy-band alignments of HfO2 on p-GaAs substrate,” Appl. Phys. Lett., (Impact factor: 3.4), 92, p. 042120, 2008.
  • K. Chia, J. R. Dong, D. Z. Chi, A. Sridhara, A. S. W. Wong, M. Suryana, G. K. Dalapati, S. J. Chua, S. J. Lee, “Effects of AlAs interfacial layer on material and optical properties of GaAs/Ge(100) epitaxy,” Appl. Phys. Lett., (Impact factor: 3.4), 92, pp. 141905, 2008.
  • K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, S. J. Lee, D. Z. Chi, “Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs,” J. Appl. Phys., (Impact factor: 2.0), 103, p. 034508, 2008.
  • J. Oh, J. Q. Lin, S. J. Lee, G. K. Dalapati, A. Sridhara, D. Z. Chi, S. J. Chua, G. Q. Lo, D. L. Kwong, “Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using X-ray photoelectron spectroscopy,” Appl. Phys. Lett., (Impact factor: 3.4), 93, p. 062107, 2008.
  • K. Dalapati, A. Sridhara, A. S. Wong, C. Chia, D. Z. Chi, “Plasma nitridation of HfO2 gate dielectric on p-GaAs substrates,” ECS Tran., 16, pp. 387-392, 2008.
  • K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, S. J. Lee, D. Z. Chi “Interface characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate,” Appl. Phys. Lett., (Impact factor: 3.4), 91, pp. 242101, 2007.
  • K. Dalapati, Y. Tong, W. Y. Loh, H. K. Mun, B. J. Cho “Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs,” Appl. Phys. Lett., (Impact factor: 3.4), 90, p. 183510, 2007.
  • K. Dalapati, Y. Tong, W. Y. Loh, H. K. Mun, B. J. Cho, “Electrical and interfacial characterization of atomic layer deposited high-K gate dielectrics on GaAs for advanced CMOS technology,” IEEE Trans. Electron Devices, (Impact factor: 2.6), 54, pp. 1831-1837, 2007.
  • K. Dalapati, S. Chattopadhyay, K. S. K. Kwa, S. H. Olsen, Y. L. Tsang, R. Agaiby, A. G. O'Neill, P. Dobrosz, S. J. Bull “Impact of strained-Si thickness and Ge out diffusion on gate oxide quality for strained Si surface channel n-MOSFETs,” IEEE Trans. Electron Devices, (Impact factor: 2.6), 53, pp. 1142-1152, 2006.
  • K. Dalapati, S. Chattopadhyay, L. S. Driscoll, A. G. O’Neill, K. S. K. Kwa, S. H. Olsen, “Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method,” J. Appl. Phys., (Impact factor: 2.0), 99, pp. 034501-034508, 2006.
  • Chakraborty, M. K. Bera, G. K. Dalapati, D. Paramanik, S. Varma, P. K. Bose, S. Bhattacharya, and C. K. Maiti, “Leakage current characteristics and energy band diagram of Al/ZrO2/Si0.3Ge0.7 hetero-MIS structures,” Semicond. Sci. Technol., (Impact factor: 2.3), 21, pp. 467-472, 2006.
  • K. Bera, S. Chakraborty, R. Das, G. K. Dalapati, S. Chattopadhyay, S. K. Samanta, W. J. Yoo, A. K. Chakraborty, Y. Butenko, L. Šiller, M. R. C. Hunt , S. Saha, and C. K. Maiti, “Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers,” J. Vac. Sci. Technol. B, (Impact factor: 1.5), 24, pp. 84-90, 2006.
  • Saha, S. Chattopadhyay, G. K. Dalapati, S. K. Nandi, and C. K. Maiti, “An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode,” Microelectronics Reliability, (Impact factor: 1.3), 45, pp. 1154-1160, 2005.
  • R. Saha, S. Chattopadhyay, G. K. Dalapati, C. Bose, and C. K. Maiti “Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode,” Mat. Sci. Semicond. Proc., (Impact factor: 2.3), 8, pp. 249-253, 2005.
  • K. Dalapati, S. K. Samanta, S. Chatterjee, P. K. Bose, S. Varma, Shivprasad Patil, and C. K. Maiti, “Electrical properties and conduction mechanism of ZrO2 films on Si1-yCy,” Jpn. J. Appl. Phys., (Impact factor: 1.3), 43, pp. 3498-3502, 2004.
  • K. Maiti, S. K. Samanta, G. K. Dalapati, S. K. Nandi, and S. Chatterjee, “Electrical characterization of TiO2 gate oxides on strained-Si,” Microelectron. Engineering, (Impact factor: 1.8), 72, pp. 253-256, 2004.
  • K. Maiti, S. K. Samanta, S. Chatterjee, G. K. Dalapati, and L. K. Bera, “Gate dielectrics on strained-Si/SiGe heterolayers,” Solid-State Electron., (Impact factor: 1.5), 48, pp. 1369-1389, 2004.
  • K. Samanta, G. K. Dalapati, S. Chatterjee, and C. K. Maiti, “Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers,” Appl. Surf. Sci., (Impact factor: 3.3), 224, pp. 283-287, 2004.
  • Chatterjee, G. K. Dalapati, S. K. Samanta, and C. K. Maiti, “Electrical properties of ZrO2 films on Si1-x-yGexCy epitaxial layers,” Appl. Surf. Sci., (Impact factor: 3.3), 224, pp. 288-291, 2004.
  • K. Maiti, G. K. Dalapati, S. Chatterjee, S. K. Samanta, S. Varma, and Shivprasad Patil, “Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si,” Solid-State Electron., (Impact factor: 1.5), 48, pp. 2235-2241, 2004.
  • K. Maiti, S. K. Samanta, S. Chatterjee, and G. K. Dalapati, “Determination of band offsets in strained-Si heterolayers”, Thin Solid Films, (Impact factor: 1.7), 462-463, pp. 80-84, 2004.
  • K. Dalapati, S. Chatterjee, S. K. Samanta, and C. K. Maiti, “Electrical properties of TiO2 films deposited on strained Si1-yCy layers,” Electron. Lett., (Impact factor: 1.1), 39, pp. 323-324, 2003.
  • K. Dalapati, S. Chatterjee, S. K. Samanta, S. K. Nandi, P. K. Bose, S. Varma, Shivprasad Patil, and C. K. Maiti, “Electrical properties of ultra-thin TiO2 films on Si1-yCy heterolayers,” Solid-State Electron., (Impact factor: 1.5), 47, pp. 1793-1798, 2003.
  • K. Dalapati, S. Chatterjee, S. K. Samanta, and C. K. Maiti, “Electrical characterization of low temperature deposited TiO2 on strained-SiGe layers,” Appl. Surf. Sci., (Impact factor: 3.3), 210, pp. 249-254, 2003.

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